Inventor · Hsinchu, TW

Sung-Bin Lin

12Patents
2h-index
13Co-inventors
47Inventor score

Filing activity: Mar 16, 2005 → Oct 4, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US8436411B2 Non-volatile memory Electricity 2 Active
US7193265B2 Single-poly EEPROM Physics 2 Expired
US9530783B2 Method of manufacturing non-volatile memory having SONOS memory cells Electricity 1 Active
US9793278B1 Structure of memory cell with asymmetric cell structure and method for fabricating the same Electricity 1 Active
US7714374B2 Structure and fabrication method of flash memory Electricity 1 Active
US8921888B2 Method of making semiconductor device Electricity 0 Active
US10510758B2 Semiconductor memory device and manufacturing method thereof Electricity 0 Active
US9136276B1 Memory cell structure and method for forming the same Electricity 0 Active
US10096611B2 Trapping gate forming process and flash cell Electricity 0 Active
US9659782B2 Memory device and method for fabricating the same Electricity 0 Active
US8729599B2 Semiconductor device Electricity 0 Active
US9530511B1 Operating method of memory device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.