Floating gate forming process
US8921913B1 · kind B1 · utility
4Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A floating gate forming process includes the following steps. A substrate containing active areas isolated from each other by isolation structures protruding from the substrate is provided. A first conductive material is formed to conformally cover the active areas and the isolation structure. An etch back process is performed on the first conductive material to respectively form floating gates separated from each other in the active areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.