Patent · US Active

Self-referenced sense amplifier for spin torque MRAM

US8923041B2 · kind B2 · utility

18Cited by
20References
23Claims
0Family size

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Key dates

Filing dateMar 15, 2013
Grant dateDec 30, 2014
Priority date
Expiry dateMar 23, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/002
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Circuitry and a method provide a plurality of timed control and bias voltages to sense amplifiers and write drivers of a spin-torque magnetoresistive random access memory array for improved power supply noise rejection, increased sensing speed with immunity for bank-to-bank noise coupling, and reduced leakage from off word line select devices in an active column.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.