System and method of dosage profile control
US8925479B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Nov 12, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.