Plasma processing apparatus
US8926790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2006 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Jun 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32495
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.