Porous silicon electro-etching system and method
US8926803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2010 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Feb 24, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.