Methods for annealing a contact metal layer to form a metal silicidation layer
US8927423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Dec 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.