Electronic device including a schottky contact

US8928050B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Gary H. Loechelt · Tempe, US
• Prasad Venkatraman · Gilbert, US
• Zia Hossain · Tempe, US
• Gordon M. Grivna · Mesa, US

Key dates

• Filing date: Mar 11, 2013
• Grant date: Jan 6, 2015
• Expiry date: Mar 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/60

Abstract

An electronic device can include a semiconductor layer having a primary surface, and a Schottky contact comprising a metal-containing member in contact with a horizontally-oriented lightly doped region within the semiconductor layer and lying adjacent to the primary surface. In an embodiment, the metal-containing member lies within a recess in the semiconductor layer and contacts the horizontally-oriented lightly doped region along a sidewall of the recess. In other embodiment, the Schottky contact may not be formed within a recess, and a doped region may be formed within the semiconductor layer under the horizontally-oriented lightly doped region and have a conductivity type opposite the horizontally-oriented lightly doped region. The Schottky contacts can be used in conjunction with power transistors in a switching circuit, such as a high-frequency voltage regulator.