Write driver circuit and method for writing to a spin-torque MRAM
US8929132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A write driver for writing to a spin-torque magnetoresistive random access memory (ST-MRAM) minimizes sub-threshold leakage of the unselected (off) word line select transistors in the selected column. An effective metal resistance in the bit line and/or source line is reduced and power supply noise immunity is increased. Write driver bias signals are isolated from global bias signals, and a first voltage is applied at one end of a bit line using one of a first NMOS-follower circuit or a first PMOS-follower circuit. A second voltage is applied at opposite ends of a source line using, respectively, second and third PMOS-follower circuits, or second and third NMOS-follower circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.