Modeling technique for resistive random access memory (RRAM) cells
US8930174B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0009
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Accurate simulation of two-terminal resistive random access memory (RRAM) behavior is accomplished by solving equations including state variables for filament length growth, filament width growth, and temperature. Such simulations are often run in a SPICE environment. Highly accurate models simulate the dynamic nature of filament propagation and multiple resistive states by using a sub-circuit to represent an RRAM cell. In the sub-circuit, voltages on floating nodes control current output while the voltage dropped across the sub-circuit controls growth and temperature characteristics. Properly executed, such a sub-circuit can accurately model filament growth at all phases of conductance including dynamic switching and a plurality of resistive states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.