Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures
US8932933B2 · kind B2 · utility
2Cited by
7References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2012 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | May 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms. The at least one exposed surface of at least one structure is contacted with at least one of an organo-phosphonic acid and an organo-phosphoric acid to form a material having a hydrophobic surface on the at least one exposed surface of the least one structure. A method of forming a semiconductor device structure and a semiconductor device structure are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.