Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques

US8932961B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Sohan S. Mehta · Saratoga Springs, US
• Tong Qing Chen · Singapore, SG
• Vikrant Chauhan · Beacon, US
• Ravi Prakash Srivastava · Clifton Park, US
• Catherine B. Labelle · Wappingers Falls, US
• Mark Kelling · Marlboro, US

Key dates

• Filing date: Feb 13, 2012
• Grant date: Jan 13, 2015
• Expiry date: Dec 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.