Patent · US Active

Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array

US8933429B2 · kind B2 · utility

3Cited by
1References
15Claims
0Family size

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Key dates

Filing dateAug 23, 2013
Grant dateJan 13, 2015
Priority date—
Expiry dateAug 23, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B63/80
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a low band gap dielectric layer disposed between two higher band gap dielectric layers. The high band gap dielectric layers can be doped with doping materials to form traps at energy levels higher than the operating voltage of the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.