Hybrid substrate with improved isolation and simplified method for producing a hybrid substrate
US8936993B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76264
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hybrid substrate comprises first and second active areas made from semiconductor materials laterally offset from one another and separated by an isolation area. The main surfaces of the isolation area and of the first active area form a plane. The hybrid substrate is obtained from a source substrate successively comprising layers made from a first and second semiconductor materials separated by an isolation layer. A single etching mask is used to pattern the isolation area, first active area and second active area. The main surface of the first active area is released thereby forming voids in the source substrate. The etching mask is eliminated above the first active area. A first isolation material is deposited, planarized and etched until the main surface of the first active area is released.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.