Manufcaturing method for room-temperature substrate bonding
US8936998B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Mar 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.