Nitride electronic device and method for manufacturing the same
US8937002B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Mar 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.