Vertical cross point arrays for ultra high density memory applications
US8937292B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2011 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Feb 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
An ultra-high-density vertical cross-point array comprises a plurality of horizontal line layers having horizontal lines interleaved with a plurality of vertical lines arranged in rows and columns. The vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each consecutive pair of horizontal lines in each horizontal line layer. Each vertical line comprises a center conductor surrounded by a single or multi-layered memory film. Accordingly, when interleaved with the horizontal lines, two-terminal memory cells are integrally formed between the center conductor of each vertical line and each crossing horizontal line. By configuring the vertical and horizontal lines so that a row of vertical lines is positioned between each consecutive pair of horizontal lines, a unit memory cell footprint of just 2F2 may be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.