Patent · US Active

Non-volatile storage with read process that reduces disturb

US8937835B2 · kind B2 · utility

4Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 4, 2013
Grant dateJan 20, 2015
Priority date
Expiry dateMay 17, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/3427
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A apparatus and process for reading data from non-volatile storage includes applying a read compare signal to a selected data memory cell of a NAND string, applying a first set of one or more read pass voltages to unselected data memory cells at both ends of the NAND string and applying a second set of one or more read pass voltages to unselected data memory cells between both ends of the NAND string and on both sides of the selected data memory cell. The second set of one or more read pass voltages are all higher than the first set of one or more read pass voltages.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.