Method of performing optical proximity correction for preparing mask projected onto wafer by photolithography
US8938697B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design comprising a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system by a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.