Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth

US8939765B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stephan Kronholz · Dresden, DE
• Peter Javorka · Radebeul, DE
• Maciej Wiatr · Dresden, DE
• Roman Boschke · Dresden, DE
• Christian Krueger · Stuttgart, DE

Key dates

• Filing date: Dec 10, 2010
• Grant date: Jan 27, 2015
• Expiry date: Nov 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0184

Abstract

In sophisticated semiconductor devices, the defect rate that may typically be associated with the provision of a silicon/germanium material in the active region of P-channel transistors may be significantly decreased by incorporating a carbon species prior to or during the selective epitaxial growth of the silicon/germanium material. In some embodiments, the carbon species may be incorporated during the selective growth process, while in other cases an ion implantation process may be used. In this case, superior strain conditions may also be obtained in N-channel transistors.