Overlapping contacts for semiconductor device
US8940634B2 · kind B2 · utility
4Cited by
17References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.