Through hole vias at saw streets including protrusions or recesses for interconnection
US8940636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2011 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Jan 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die. An adhesive layer is formed over a surface of the semiconductor die and the insulating material. A via is formed in the insulating material and the adhesive layer. A conductive material is deposited in the via to form a through hole via (THV). A conductive layer is formed over the contact pad and the THV to electrically connect the contact pad and the THV. The plurality of semiconductor die is singulated. The insulating material can include an organic material. The active surface of the semiconductor die can include an optical device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.