Patent · US Active

Substrate wiring method and semiconductor manufacturing device

US8940638B2 · kind B2 · utility

4Cited by
1References
12Claims
0Family size

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Key dates

Filing dateFeb 23, 2011
Grant dateJan 27, 2015
Priority date
Expiry dateMay 15, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In a substrate wiring method, copper is embedded all the way to the lowest parts of a wiring pattern formed on a substrate. The method is used to wire a substrate in a processing chamber kept in a vacuum state, the substrate having a wiring pattern formed thereon. The method includes a preprocessing step in which the wiring pattern on the substrate is cleaned using a desired cleaning gas and an embedding step in which, after the preprocessing step, metal nanoparticles are embedded in the wiring pattern using a clustered metal gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.