Monolithically integrated vertical JFET and Schottky diode

US8941117B2 · kind B2 · utility

Assignee

• Avogy, Inc. · US

Inventors

• Isik C. Kizilyalli · San Francisco, US
• Hui Nie · Cupertino, US
• Andrew P. Edwards · San Jose, US
• Linda Romano · Sunnyvale, US
• David P. Bour · Cupertino, US
• Richard J. Brown · Los Gatos, US
• Thomas R. Prunty · Santa Clara, US

Key dates

• Filing date: Jul 3, 2013
• Grant date: Jan 27, 2015
• Expiry date: Jul 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/87

Abstract

An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.