Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
US8941442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2012 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24149
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating one or more vapor cells comprises forming one or more vapor cell dies in a first wafer having a first diameter, and anodically bonding a second wafer to a first side of the first wafer over the vapor cell dies, the second wafer having a second diameter. A third wafer is positioned over the vapor cell dies on a second side of the first wafer opposite from the second wafer, with the third wafer having a third diameter. A sacrificial wafer is placed over the third wafer, with the sacrificial wafer having a diameter that is larger than the first, second and third diameters. A metallized bond plate is located over the sacrificial wafer. The third wafer is anodically bonded to the second side of the first wafer when a voltage is applied to the metallized bond plate while the sacrificial wafer is in place.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.