Film formation apparatus
US8945339B2 · kind B2 · utility
466Cited by
21References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2011 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.