Patent · US Active

Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program

US8945800B2 · kind B2 · utility

3Cited by

2References

19Claims

0Family size

Assignee

ASML NETHERLANDS B.V. · NL

Inventors

Tsann-Bim Chiou · Hsinchu, TW
Mircea Dusa · Campbell, US
Alek Chi-Heng Chen · Taipei, TW

Key dates

Filing date	Aug 12, 2013
Grant date	Feb 3, 2015
Priority date	—
Expiry date	Aug 12, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG06F30/39
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.