Self-topcoating resist for photolithography
US8945808B2 · kind B2 · utility
3Cited by
31References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.