Methods of forming capacitors
US8946043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2011 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Oct 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.