Method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate
US8946053B2 · kind B2 · utility
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5References
14Claims
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Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jun 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing irregularities at a surface of a layer transferred from a source substrate to a glass-based support substrate, by generating a weakening zone in the source substrate; contacting the source substrate and the glass-based support substrate; and splitting the source substrate at the weakening zone; wherein the glass-based substrate has a thickness of between 300 μm and 600 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.