Laser and plasma etch wafer dicing using UV-curable adhesive film
US8946057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Apr 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.