Method for cleaning semiconductor substrate
US8946081B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a method of cleaning a semiconductor substrate of a device structure and a method of forming a silicide layer on a semiconductor substrate of a device structure. Embodiments include steps of converting a top portion of the substrate into an oxide layer and removing the oxide layer to expose a contaminant-free surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.