Ge-Rich GST-212 phase change memory materials
US8946666B2 · kind B2 · utility
13Cited by
21References
12Claims
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Key dates
| Filing date | Dec 15, 2011 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Dec 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device, suitable for integrated circuits, comprising such materials is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.