Resistive switching device structure with improved data retention for non-volatile memory device and method
US8946673B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Aug 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
A non-volatile memory device structure includes a first conductor extending in a first direction, a second conductor extending in a second direction approximately orthogonal to the first direction, an amorphous silicon material disposed in an intersection between the first and second conductors characterized by a first resistance upon application of a first voltage, wherein the first resistance is dependent on a conductor structure comprising material from the second conductor formed in a portion of the resistive switching material, and a layer of material configured in between the second conductor and the amorphous silicon material, wherein the layer maintains at least a portion the conductor structure in the amorphous silicon material, and wherein the layer inhibits conductor species from the portion of the conductor structure from migrating away from the second conductor when a second voltage having an amplitude less than the first voltage is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.