Method and system for doping control in gallium nitride based devices
US8946788B2 · kind B2 · utility
2Cited by
6References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 4, 2011 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Mar 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.