Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing
US8946863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2010 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Aug 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.