Patent · US Active

Thermally assisted magnetic writing device

US8947916B2 · kind B2 · utility

1Cited by

1References

17Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Bernard Dieny · Le Pont-de-Claix, FR
Jerome Moritz · Voiron, FR
Ricardo Sousa · Amadora, PT

Key dates

Filing date	Sep 29, 2011
Grant date	Feb 3, 2015
Priority date	—
Expiry date	Dec 29, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/3286
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.