Method of forming semiconductor device using Si-H rich silicon nitride layer
US8951853B1 · kind B1 · utility
1Cited by
2References
18Claims
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Key dates
| Filing date | Mar 10, 2010 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | May 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.