Forming strained and relaxed silicon and silicon germanium fins on the same wafer

US8951870B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Veeraraghavan S. Basker · Schenectady, US
• Bruce B. Doris · Brewster, US
• Ali Khakifirooz · Los Altos, US
• Tenko Yamashita · Schenectady, US
• Chun-Chen Yeh · Clifton Park, US

Key dates

• Filing date: Mar 14, 2013
• Grant date: Feb 10, 2015
• Expiry date: Aug 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Various embodiments form strained and relaxed silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is formed. The semiconductor wafer comprises a substrate, a dielectric layer, and a strained silicon germanium (SiGe) layer. At least one region of the strained SiGe layer is transformed into a relaxed SiGe region. At least one strained SiGe fin is formed from a first strained SiGe region of the strained SiGe layer. At least one relaxed SiGe fin is formed from a first portion of the relaxed SiGe region. Relaxed silicon is epitaxially grown on a second strained SiGe region of the strained SiGe layer. Strained silicon is epitaxially grown on a second portion of the relaxed SiGe region. At least one relaxed silicon fin is formed from the relaxed silicon. At least one strained silicon fin is formed from the strained silicon.