Inventor · Los Altos, CA, US

Ali Khakifirooz

757Patents
25h-index
174Co-inventors
89Inventor score

Filing activity: Sep 24, 2009 → Mar 31, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8969934B1 Gate-all-around nanowire MOSFET and method of formation Electricity 308 Active
US7993999B2 High-K/metal gate CMOS finFET with improved pFET threshold voltage Electricity 100 Active
US9659963B2 Contact formation to 3D monolithic stacked FinFETs Electricity 70 Active
US8169025B2 Strained CMOS device, circuit and method of fabrication Electricity 57 Active
US8796093B1 Doping of FinFET structures Electricity 52 Active
US8524592B1 Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devices Electricity 44 Active
US8703557B1 Methods of removing dummy fin structures when forming finFET devices Electricity 42 Active
US9293459B1 Method and structure for improving finFET with epitaxy source/drain Electricity 39 Active
US9312383B1 Self-aligned contacts for vertical field effect transistors Electricity 38 Active
US8951870B2 Forming strained and relaxed silicon and silicon germanium fins on the same wafer Electricity 37 Active
US9190471B2 Semiconductor structure having a source and a drain with reverse facets Electricity 35 Active
US9455331B1 Method and structure of forming controllable unmerged epitaxial material Electricity 34 Active
US8900951B1 Gate-all-around nanowire MOSFET and method of formation Electricity 32 Active
US8541274B1 Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formation Electricity 32 Active
US9219154B1 Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors Electricity 31 Active
US9093533B2 FinFET structures having silicon germanium and silicon channels Electricity 31 Active
US9356027B1 Dual work function integration for stacked FinFET Electricity 31 Active
US8822320B2 Dense finFET SRAM Electricity 30 Active
US8486776B2 Strained devices, methods of manufacture and design structures Electricity 29 Active
US8841185B2 High density bulk fin capacitor Electricity 29 Active
US9196479B1 Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures Electricity 28 Active
US9257527B2 Nanowire transistor structures with merged source/drain regions using auxiliary pillars Electricity 27 Active
US8435845B2 Junction field effect transistor with an epitaxially grown gate structure Electricity 26 Active
US8207038B2 Stressed Fin-FET devices with low contact resistance Electricity 26 Active
US8921191B2 Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same Electricity 25 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.