Method to induce strain in 3-D microfabricated structures

US8952420B1 · kind B1 · utility

Assignee

• STMICROELECTRONICS, INC. · US

Inventors

• Nicolas Loubet · Guilderland, US
• Pierre Morin · Albany, US

Key dates

• Filing date: Jul 29, 2013
• Grant date: Feb 10, 2015
• Expiry date: Jul 29, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.