Patent · US Active

Semiconductor device and manufacturing method thereof

US8952544B2 · kind B2 · utility

38Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 3, 2013
Grant dateFeb 10, 2015
Priority date
Expiry dateJul 3, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A fan-out package includes a molding compound, a conductive plug and a stress buffer. The conductive plug is in the molding compound. The stress buffer is between the conductive plug and the molding compound. The stress buffer has a coefficient of thermal expansion (CTE). The CTE of the stress buffer is between a CTE of the molding compound and a CTE of the conductive plug. A method of manufacturing a three dimensional includes plating a post on a substrate, and disposing a stress buffer on the sidewall of the post. The method further includes surrounding the stress buffer with a molding compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.