Sense amplifier for flash memory
US8953384B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier has a reference cell current branch in which a reference cell determines a reference cell current, a column load converts the reference cell current to a reference voltage, and a feedback circuit to maintain the reference cell drain voltage. The sense amplifier also has a main cell current branch in which a main cell operationally selected from an array of flash memory cells determines a main cell current, a column load converts the main cell current to a main voltage, and a feedback circuit to maintain the main cell drain voltage. A differential amplifier compares the reference voltage with the main voltage and furnishes a logical level at its output depending on the relative values. A boost circuit has a pull up section coupled across the column load and a pull down section coupled across the main cell for accelerating the logical zero sensing time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.