Method of forming a semiconductor device including a silicon controlled rectifier

US8956924B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Krzysztof Domanski · Munich, DE
• Cornelius Christian Russ · Diedorf, DE
• Kai Esmark · Schwanau, DE

Key dates

• Filing date: Jun 24, 2013
• Grant date: Feb 17, 2015
• Expiry date: Jun 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13034

Abstract

A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.