Conversion of thin transistor elements from silicon to silicon germanium

US8957476B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Glenn A. Glass · Portland, US
• Daniel B. Aubertine · North Plains, US
• Anand S. Murthy · Beaverton, US
• Gaurav Thareja · Santa Clara, US
• Stephen M. Cea · Hillsboro, US

Key dates

• Filing date: Dec 20, 2012
• Grant date: Feb 17, 2015
• Expiry date: Dec 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.