Heated wafer carrier profiling
US8958061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2012 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Jul 12, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/745
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.