Patent · US Active

Memory cell flipping for mitigating SRAM BTI

US8958236B2 · kind B2 · utility

2Cited by

1References

20Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

John Wuu · Fort Collins, US
Keith Kasprak · Austin, US
Russell Schreiber · Austin, US

Key dates

Filing date	Jan 24, 2013
Grant date	Feb 17, 2015
Priority date	—
Expiry date	Apr 28, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/04
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An apparatus may comprise a memory cell configured to operate according to a voltage mode, a voltage controller coupled with the memory cell, wherein the voltage controller is configured to change the voltage mode of the memory cell between a low voltage mode and a high voltage mode, and a memory controller module coupled with the memory cell, wherein the memory controller is configured to invert a logic state stored in the memory cell based on the voltage mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.