Method and system for dimensional uniformity using charged particle beam lithography
US8959463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is modified to lower the calculated sensitivity. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a resist-coated reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.