Composition for advanced node front-and back-end of line chemical mechanical polishing
US8961815B2 · kind B2 · utility
1Cited by
7References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 1, 2010 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jan 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.