Methods and apparatus for plasma-based deposition
US8962101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.